Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates

The impact of AlN nucleation layers on the strain evolution in a subsequent GaN layer was investigated by in-situ wafer curvature measurement. It is shown that growth temperature and thickness of the AlN nucleation layer strongly influence the built-in strain and crystalline quality of GaN. A two-step AlN growth procedure leads to a decrease of compressive strain as well as the reduction of the total dislocation density (6–9×108 cm−2) in the overgrown GaN layer. TEM analysis reveals different relaxation mechanisms of GaN in v-pits and on flat surfaces of AlN. With a two-step AlN nucleation layer a low wafer bow can be achieved together with a low dislocation density.

► The impact of thickness and growth temperature of AlN on strain in GaN was investigated.
► AlN grown by a two-step procedure reduces the compressive strain as well as dislocation density in the GaN layer.
► The strain relief mechanism of GaN on v-pits in AlN is presented.