کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791158 | 1524461 | 2013 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane](/preview/png/1791158.png)
GaN crystals were grown on hydride vapor phase epitaxy (HVPE) GaN seed crystals with non-polar surface orientations varying between on-axis m-plane and a-plane using the basic ammonothermal method. Three different surface morphology regimes were observed with the surface features including mounds, slate-like morphologies, and pyramidal ‘spikes’ composed of (0001) and non-polar microfacets. A macroscopic off-orientation of the non-steady-state surface and newly appearing steady-state growth surfaces towards [0001¯] by approximately 1° was observed with geometric constraints suggesting an off-orientation of the observed {10–10} microfacets towards [0001¯] by approximately 1° or greater.
► Ammonothermal growth was performed on GaN crystals of varying nonpolar orientation.
► Surface morphology was examined and three different regimes were observed.
► Observed features included mounds, slate-like morphologies, and pyramidal ‘spikes’.
► A macroscopic off-orientation of m-plane facets by 1° towards [000–1] was observed.
Journal: Journal of Crystal Growth - Volume 368, 1 April 2013, Pages 67–71