Float-Zone silicon crystal growth at reduced RF frequencies

► Dislocation-free crystals of 4 inch diameter were successfully grown at RF frequencies of 2.0 and 1.7 MHz. ► It was confirmed that lower frequencies reduce the risk of arcing during the growth of large-diameter crystals. ► The worsened melting behavior characterized by spike formation is controllable. ► The deflection of the interface was increased with reduced frequency. ► Convection is more unstable in all parts of the floating zone.