کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791623 1023615 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Degenerated MgZnO films obtained by excessive zinc
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Degenerated MgZnO films obtained by excessive zinc
چکیده انگلیسی

By introducing excessive zinc during the growth process, degenerated Mg0.46Zn0.54O films have been prepared. The resistivity of the Mg0.46Zn0.54O films is only 0.053 Ω cm, and the electron concentration is 1.0×1019 cm−3, which is well above the Mott concentration of ZnO (2.9×1018 cm−3). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices.


► Mg0.46Zn0.54O films with a large bandgap of about 4.344 eV have been prepared.
► Electron concentration of the Mg0.46Zn0.54O films can reach 1.0×1019 cm−3.
► Origin of such a high electron concentration can be attributed to excessive zinc.
► Hall measurement indicates that the Mg0.46Zn0.54O films are degenerated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 347, Issue 1, 15 May 2012, Pages 95–98
نویسندگان
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