Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy

► Substrate misorientation effect on the GaAs morphology was studied. ► Bismuth flow deposit time effect on the GaAs morphology was studied. ► Spectral reflectance (SR) and microscopy (AFM) were used to quantify our work. ► Correlation between SR and AFM shows the complementarity of two techniques.