MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire

► This paper investigates the MOVPE growth of semipolar (112¯2) AlN. ► The (112¯2) crystal orientation could be isolated through variation of V/III ratio. ► Crack free surfaces have been achieved. ► (112¯2) AlN layer thicknesses larger than 1μm have been realized.