کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791934 1023626 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Critical thickness of the 2-dimensional to 3-dimensional transition in GaSb/GaAs(001) quantum dot growth
چکیده انگلیسی

The phase transformation from planar to quantum dot growth is driven by strain energy reduction at the cost of surface energy. By calculating and comparing the strain energies of monolayer thick GaSb and InAs films on GaAs(001), a critical thickness for the 2-dimensional to 3-dimensional phase transformation of about 1.2 ML was derived for the GaSb/GaAs quantum dot system. This value is in agreement with the direct observation of the effectively deposited amount of material using cross-sectional scanning tunneling microscopy. Deviating experimental literature values can be traced back to the neglect of the Sb-for-As exchange process.


► Critical thickness of GaSb/GaAs(001) quantum dots growth.
► Cross-sectional scanning tunneling microscopy structure determination.
► Strain energy calculation of wetting layer for phase transformation to quantum dots.
► Explanation of previously inconsistent values for the critical thickness.
► For GaSb/GaAs(001) a critical thickness of about 1.2 monolayer is derived by experiment and theory.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 338, Issue 1, 1 January 2012, Pages 103–106
نویسندگان
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