Gadolinium nitride films deposited using a PEALD based process

Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp)3} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 °C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 °C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (∼5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp)3, it was still possible to obtain smooth (Ra.=∼0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported.

► Gadolinium nitride films deposited using plasma enhanced atomic layer deposition.
► ALD using Gd(MeCp)3 and N2 plasma between 150 and 300 °C.
► Films deposited with N2 plasma display a 1:1 Gd:N ratio with low oxygen (∼5 at%).