Keywords: A3 رسوب لایه اتمی; A1. Interfaces; A3. Atomic layer deposition; B1. Perovskites; B2. Ferroelectric materials;
مقالات ISI A3 رسوب لایه اتمی (ترجمه نشده)
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Annealing behavior and electrical properties of atomic layer deposited PbTiO3 and PZT films
Keywords: A3 رسوب لایه اتمی; A3. Atomic layer deposition; B1. Lead titanate (PbTiO3); B1. Lead zirconium titanate (PZT); B2. Ferroelectric; B2. Piezoelectric material;
Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
Keywords: A3 رسوب لایه اتمی; A3. Molecular beam epitaxy; A3. Atomic layer deposition; B1. Antimonides; B2. Sb-based semiconductors;
Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A3. Thin films; A3. Atomic layer deposition; B1. Titanium dioxide; B1. TiO2-II; B1. Rutile;
Structural and optical characterization of low-temperature ALD crystalline AlN
Keywords: A3 رسوب لایه اتمی; A3. Atomic layer deposition; B1. Aluminum nitride; Optical band gap; Oxygen impurity; Refractive index
Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A3. Atomic layer deposition; B1. Titanium dioxide; B2. High-k dielectric; B3. Metal–insulator–metal capacitor
Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A1. Interfaces; A1. Reflection high energy electron diffraction; A1. X-ray diffraction; A3. Atomic layer deposition; B1. Aluminates
Epitaxial growth of orthorhombic SnO2 films on various YSZ substrates by plasma enhanced atomic layer deposition
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A3. Atomic layer deposition; B1. Tin oxide; B1. Yttria-stabilized zirconia
Gadolinium nitride films deposited using a PEALD based process
Keywords: A3 رسوب لایه اتمی; A1. Auger electron spectroscopy; A1. Medium energy ion scattering; A3. Atomic layer deposition; B1. Gadolinium compounds; B1. Nitrides; B2. Magnetic materials
Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A3. Atomic layer deposition; B1. Tin oxide; B1. Sapphire
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
Keywords: A3 رسوب لایه اتمی; A1. Crystal structure; A1. Self-limited growth; A3. Atomic layer deposition; B1. Aluminum nitride;
Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine
Keywords: A3 رسوب لایه اتمی; A1. Medium energy ion scattering; A1. Quartz crystal microbalance; A3. Atomic layer deposition; B1. Nitrides; B1. Tantalum compounds; B2. Diffusion barrier materials
Growth and phase stabilization of HfO2 thin films by ALD using novel precursors
Keywords: A3 رسوب لایه اتمی; 77.55.+f; 68.55.Ln; A3. Atomic layer deposition; A3. Chemical vapor deposition processes; B2. Dielectric materials; B1. Oxides;
Optical and structural characteristics of ZnO films grown on (0Â 0Â 0Â 1) sapphire substrates by ALD using DEZn and N2O
Keywords: A3 رسوب لایه اتمی; 71.55.Gs; 68.37.Hk; 61.10.Nz; A1. Surface structure; A1. X-ray diffraction; A3. Atomic layer deposition; B1. Zinc oxides; B2. Photoluminescence; B2. Semiconducting II-VI materials;
Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition
Keywords: A3 رسوب لایه اتمی; 68.55.Jk; 68.55.Nq; 78.66.Hf; 81.15.KkA1. Crystal structure; A1. Low temperature growth; A3. Atomic layer deposition; B1. Zinc acetate; B2. Zinc oxide
Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces
Keywords: A3 رسوب لایه اتمی; 81.15.GhA1. Atomic force microscopy; A1. Roughening; A1. Surfaces; A3. Atomic layer deposition; B1. Oxides
Simulation of growth dynamics for nearly epitaxial films
Keywords: A3 رسوب لایه اتمی; 81.10.Aj; 81.10.Bk; 81.15.Aa; 81.15.Gh; 68.55.−aA1. Epitaxial film; A1. Growth models; A1. Growth dynamics; A1. Morphological stability; A1. Roughening; A1. Simulation; A3. ALD; A3. Atomic layer epitaxy; A3. Atomic layer deposition
Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition
Keywords: A3 رسوب لایه اتمی; 81.15.GhA1. Crystal structure; A3. Atomic layer deposition; B1. Bismuth compounds; B1. Oxides; B2. Ferroelectric material
Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate
Keywords: A3 رسوب لایه اتمی; A1. Electron energy loss spectroscopy; A3. Atomic layer deposition; B1. HfO2; B1. Silicon oxide;
Characterisation of epitaxial TiO2 thin films grown on MgO(0Â 0Â 1) using atomic layer deposition
Keywords: A3 رسوب لایه اتمی; 68.37.Lp; 68.55.âa; A1. Transmission electron microscopy; A3. Atomic layer deposition; A3. Epitaxy; B1. MgO substrate; B1. TiO2;
Gadolinium oxide thin films by atomic layer deposition
Keywords: A3 رسوب لایه اتمی; 77.55.+f; 79.60.Dp; 81.15.Gh; A3. Atomic layer deposition; A3. Chemical vapor deposition processes; B1. Gadolinium compounds; B1. Oxides; B2. Dielectric materials;