کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794505 | 1023700 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and structural characteristics of ZnO films grown on (0Â 0Â 0Â 1) sapphire substrates by ALD using DEZn and N2O
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with ã0 0 0 1ãZnO being parallel to the ã0 0 0 1ãsapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 12, 1 June 2008, Pages 3024-3028
Journal: Journal of Crystal Growth - Volume 310, Issue 12, 1 June 2008, Pages 3024-3028
نویسندگان
Ping-Yuan Lin, Jyh-Rong Gong, Ping-Cheng Li, Tai-Yuan Lin, Dong-Yuan Lyu, Der-Yuh Lin, Hung-Ji Lin, Ta-Ching Li, Kuo-Jen Chang, Wen-Jen Lin,