کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791995 | 1023627 | 2012 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001) Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)](/preview/png/1791995.png)
چکیده انگلیسی
Epitaxial Ti3GeC2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
► Epitaxial growth of Ti3GeC2(0001) on 4H-SiC(0001) using magnetron sputtering.
► Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface.
► Films are substoichiometric in Ge with small Ge particles present at the surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 343, Issue 1, 15 March 2012, Pages 133–137
Journal: Journal of Crystal Growth - Volume 343, Issue 1, 15 March 2012, Pages 133–137
نویسندگان
K. Buchholt, P. Eklund, J. Jensen, J. Lu, R. Ghandi, M. Domeij, C.M. Zetterling, G. Behan, H. Zhang, A. Lloyd Spetz, L. Hultman,