Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell

We report the performance of a 1 eV GaNAsSb-based photovoltaic cell grown using a molecular beam epitaxy system equipped with a radio frequency (RF) plasma-assisted nitrogen source. The 1 μm-thick photoabsorption layer contains 2% of N and 6% of Sb resulting in a GaNAsSb layer with bandgap energy of 1.0 eV. Under AM1.5G solar illumination condition with and without 850 nm long pass filter, the GaNAsSb-based photovoltaic cell demonstrates a JSC values of 15 and 32 mA/W, respectively. Deep level transient spectroscopy analysis reveals that the VOC of the photovoltaic cell could possibly be limited by the presence of arsenic antisite defects.

► GaNAsSb 1 eV photovoltaic cell was grown using MBE.
► High JSC of 15 mA/cm2 is obtained from the GaNAsSb cell.
► Measurement shows a VOC value of 0.27 V.
► DLTS measurements show that As antisite defects limit the cell performance.
► High sun concentration improves the value of VOC.