Growth of oriented polycrystalline α-HgI2 films by ultrasonic-wave-assisted physical vapor deposition

► α-HgI2 as more suitable material for γ, X-ray detectors. ► Polycrystalline α-HgI2 prepared by ultrasonic-wave-assisted vapor phase deposition. ► The assisted ultrasonic wave can improve structural and electrical properties of α-HgI2.