کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792569 | 1023650 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
c-Axis-aligned InN nanocolumn arrays were vertically grown on 3 μm GaN epilayers with InGaN buffer layers by radio-frequency molecular beam epitaxy without any catalysts. X-ray diffraction, transmission electron microscopy, and field-emission scanning electron microscope were used to study the structural properties of the nanocolumns. It has been found that without InGaN buffers, InN films, rather than nanocolumns, were grown even at the same N/In ratio. In addition, high-quality InN nanocolumns can grow faster on InGaN buffers. The growth mechanism was discussed and the joint actions of the gas–solid and Volmer–Weber modes promote the nucleation and the growth of InN nanocolumns.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 16–19
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 16–19
نویسندگان
Yang Pan, Ti Wang, Kai Shen, Ting Peng, Kemin Wu, Wenyi Zhang, Chang Liu,