کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792985 | 1023662 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective etching of dislocations in GaN grown by low-pressure solution growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This work presents an experimental study on the identification and quantification of different types of dislocations in GaN grown by low-pressure solution growth. A reliable defect selective etching procedure in a NaOH-KOH melt is developed and validated using transmission electron microscopy that permits to define groups of etch pits that belong each to dislocations with a specific Burgers vector. This way a comparably fast method is provided for determining the total, the specific dislocation densities and the type of dislocation in a statistically representative way. The results for the solution grown samples are compared to those obtained for MOCVD GaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 20, 1 October 2010, Pages 3040–3045
Journal: Journal of Crystal Growth - Volume 312, Issue 20, 1 October 2010, Pages 3040–3045
نویسندگان
I.Y. Knoke, P. Berwian, E. Meissner, J. Friedrich, H.P. Strunk, G. Müller,