کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793010 | 1023663 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition](/preview/png/1793010.png)
چکیده انگلیسی
We report on the growth of thick GaN epilayers on 4-in. Si(1 1 1) substrates by metalorganic chemical vapor deposition. Using intercalated AlN layers that contribute to counterbalance the tensile strain induced by the thermal mismatch between gallium nitride and the silicon substrate, up to 6.7 μm thick crack-free group III-nitride layers have been grown. Root mean-squares surface roughness of 0.5 nm, threading dislocation densities of 1.1Ã109 cmâ2, as well as X-ray diffraction (XRD) full widths at half-maximum (FWHM) of 406 arcsec for the GaN(0 0 2) and of 1148 arcsec for the GaN(3 0 2) reflection have been measured. The donor bound exciton has a low-temperature photoluminescence line width of 12 meV. The correlation between the threading dislocation density and XRD FWHM, as well as the correlation between the wafer curvature and the GaN in-plane stress is discussed. An increase of the tensile stress is observed upon n-type doping of GaN by silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 314, Issue 1, 1 January 2011, Pages 85-91
Journal: Journal of Crystal Growth - Volume 314, Issue 1, 1 January 2011, Pages 85-91
نویسندگان
H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard,