A theoretical model for the MBE growth of AlGaAsN using ammonia as the N source

A model has been developed to investigate the potential of ammonia (NH3) for use as the N source for the growth of AlGaAsN material by molecular beam epitaxy (MBE). The effects of different growth parameters on N incorporation have been estimated, including the growth temperature, the partial pressures of the different elements, the Al concentration, the growth rate and growth interruptions. Comparison of experimental data and simulated results indicates that this model provides a reasonable description of the N incorporation process. The model also shows that it may be possible to achieve wavelengths of ≥1.3 μm using Al+NH3 with the proper growth conditions.