کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793784 | 1023683 | 2009 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermodynamics of GaAs nanowire MBE growth with gold droplets
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The thermodynamics of growth conditions of GaAs nanowires using gold droplets is analyzed. Equilibrium conditions for steady-state growth using experimental molecular beam epitaxy (MBE) impinging molecular flows, as previously published, are calculated in the range 793-893Â K. These show that: (i) the tie line for Ga liquidus composition in equilibrium with GaAs(s) is in the 0.4-0.6 mole fraction range, close to the GaAu-GaAs pseudo-binary section, (ii) the As content of the droplet is in the 0.2-0.4Ã10â3 mole fraction range and (iii) the growth rate is mainly governed by the contact angle that determines the droplet section. Different cooling conditions are analyzed using the Scheil-Guliver assumptions to compare final phases after solidification, as analyzed by X-ray diffraction (XRD), with our calculations. The agreement is very good and this feature demonstrates that quasi-equilibrium conditions prevail in the growth process of nanowires.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 14, 1 July 2009, Pages 3598-3608
Journal: Journal of Crystal Growth - Volume 311, Issue 14, 1 July 2009, Pages 3598-3608
نویسندگان
C. Chatillon, F. Hodaj, A. Pisch,