Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process

Crystalline GaSb films were deposited using the tailor-made single-source precursor [t-Bu2GaSbEt2] in a specifically designed MOCVD reactor under HV conditions at low temperatures. In addition, tetraethyldistibine Sb2Et4 has been successfully used as the precursor for the deposition of crystalline antimony films at low temperatures.