Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth

Wideband wavelength electroluminescence (EL) more than 400 nm was obtained in self-assembled Stranski-Krastanov (S-K) InAs/InP quantum dots (QDs) grown by selective area low-pressure metal-organic vapor-phase epitaxy (MOVPE). We used two techniques to control the EL peak spectrum in order to obtain the wideband emission spectrum of the device. One is selective area growth using a SiO2 narrow 16-stripe mask array pattern, and the other is a double-cap procedure in the growth of the QDs layer to change the height of QDs layer by layer.