Growth and magnetic properties of zb-type MnAs films on GaAs substrates by high-temperature MBE

We have grown MnAs films on GaAs(1 1 1)B substrates by high-temperature molecular beam epitaxy (MBE) and have investigated their crystal structures and magnetic properties. X-ray diffraction (XRD) and grazing incidence X-ray diffraction (GIXD) results showed that two kinds of zb-type MnAs films with lattice constants of 5.73 and 5.96 Å were grown. The zb-type MnAs films show higher Curie temperature than 350 K and larger magnetization than the reported zb-type MnAs. At the initial stage of MnAs growth, Ga1−xMnxAs was grown and this Ga1−xMnxAs layer might play an important role of a buffer layer to enable the zb-MnAs growth.