Epitaxial growth of CdSexTe1−x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures

CdSeTe epilayers were grown by molecular beam epitaxy on (1 0 0)-oriented vicinal silicon wafers. By controlling the growth conditions, either multiple-phase or single-phase epilayers could be deposited. In this paper we present a detailed investigation of the structure of a single-phase CdSeTe epilayer using X-ray diffraction, Rutherford back scattering, and transmission electron microscopy. Photoreflectance and photocurrent results are also presented.