کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794144 | 1023692 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of growth rate in the early stage of high temperature (HT) GaN layer growth on the quality of GaN by MOCVD has been investigated. The properties of GaN layers were measured by double crystal X-ray diffraction (DCXRD), Hall method, photoluminescence, and atomic force microscopy, respectively. The results reveal that the quality of GaN layers is influenced by the growth rate of HT GaN growth in the early stage. The properties of GaN layers are obviously improved by decreasing the growth rate in the early stage of HT GaN growth properly. However, when the growth rate decreases to some extent, the quality of GaN layer deteriorates instead. The reasons behind this phenomenon were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 16, 1 August 2008, Pages 3722–3725
Journal: Journal of Crystal Growth - Volume 310, Issue 16, 1 August 2008, Pages 3722–3725
نویسندگان
Shuti Li, Jun Su, Guanghan Fan, Yong Zhang, Shuwen Zheng, Huiqing Sun, Jianxing Cao,