کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794261 | 1023693 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A group of AlInGaAs/InGaAs/InAs strain compensated triangular quantum well samples have been grown by using gas source molecular beam epitaxy (GSMBE), and their properties are investigated by X-ray diffraction and photoluminescence (PL) measurements. Through the adjustment of the growth temperature and barrier width, the quality of the quantum wells has been improved distinctly. The maximal PL peak wavelength of 2.38 μm at 300 K has been reached. The X-ray diffraction measurements show good structural properties and the full-width at half-maximum (FWHM) of PL spectrum is 17 meV at 12 K and 33 meV at 300 K. For the sample with larger well width, the transition involving the second sub-energy levels occurs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1935-1938
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1935-1938
نویسندگان
Y. Gu, Y.G. Zhang, K. Wang, A.Z. Li, Y.Y. Li,