کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794275 1023693 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature
چکیده انگلیسی

In this work we study both the structural and electrical qualities of AlGaN/GaN high electron mobility transistor heterostructures grown on silicon(1 1 1) by molecular beam epitaxy. Correlations are established between the quality of the structures and the relaxation rate of the mismatch stress in layers grown using ammonia as a nitrogen source. Comparison with layers grown using a nitrogen plasma source confirms the primordial role of the growth temperature for stress relaxation and dislocation filtering.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 2002–2005
نویسندگان
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