In situ determination of Sb distribution in Sb/GaAs(0 0 1) layer for high-density InAs quantum dot growth

An Sb-adsorbed GaAs(0 0 1) substrate that serves as a template for high-density InAs quantum dot (QD) growth was investigated using in situ X-ray diffraction. The Sb distribution in the top eight layers from the surface was determined by crystal truncation rod scattering analysis. It was found that Sb atoms penetrated to the eighth layer when GaAs(0 0 1) came in contact with an Sb environment. The amounts of Sb in the first and second layers were, however, saturated at 13 atomic layer (AL) and 23 AL, respectively. A comparison between the X-ray results and atomic force microscopy observations of the QD density showed that the formation of high-density QDs is correlated with the total amount of Sb in the surface and subsurface layers.