کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794371 | 1023696 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal treatment of indium-doped Cd1âxZnxTe single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Indium-doped Cd1âxZnxTe (CZT) single crystals were annealed at different temperatures using a Cd1âyZny alloy as the source for the vapor environment control. The effects of annealing temperature on the properties of CZT crystals are discussed in detail. The wafers were characterized by EDX, I-V, IR transmittance, and PL spectra. The results indicated that after annealing, the homogeneities of Cd, Zn and Te distributions were improved, the resistivity of the wafers was enhanced, and IR transmittance was ameliorated. All these improvements increase as the annealing temperature increases up to 1073Â K. For the PL spectra of the wafer annealed at 1073Â K, the intensity of the Dcomplex peak decreased after annealing; meanwhile, the (D, A) peak disappeared and the (D0, X) peak appeared. It is clear that the optimal temperature of annealing treatment is â¼1073Â K using a Cd1âyZny alloy as the annealing source.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1268-1272
Journal: Journal of Crystal Growth - Volume 311, Issue 5, 15 February 2009, Pages 1268-1272
نویسندگان
Pengfei Yu, Wanqi Jie, Tao Wang, Gangqiang Zha,