کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794542 1023701 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si (0 0 1) substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and characterization of GaSb/AlGaSb multi-quantum well structures on Si (0 0 1) substrates
چکیده انگلیسی

GaSb/AlGaSb multi-quantum well (MQW) structures with an AlSb initiation layer and a relatively thick GaSb buffer layer grown on Si (0 0 1) substrates were prepared by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM) images and high-resolution X-ray diffraction (XRD) patterns indicated definite MQW structures. The photoluminescence (PL) emission around 1.55 μm wavelength was observed for 10.34 nm GaSb/30 nm Al0.6Ga0.4Sb MQW structure at room temperature. Dependence of PL emission energy on GaSb well width was well explained by finite square well potential model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 1, 4 January 2008, Pages 78–82
نویسندگان
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