کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794559 | 1023701 | 2008 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Geometric modeling of homoepitaxial CVD diamond growth: I. The {1Â 0Â 0}{1Â 1Â 1}{1Â 1Â 0}{1Â 1Â 3} system
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Geometric modeling of homoepitaxial CVD diamond growth: I. The {1Â 0Â 0}{1Â 1Â 1}{1Â 1Â 0}{1Â 1Â 3} system Geometric modeling of homoepitaxial CVD diamond growth: I. The {1Â 0Â 0}{1Â 1Â 1}{1Â 1Â 0}{1Â 1Â 3} system](/preview/png/1794559.png)
چکیده انگلیسی
Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1Â 0Â 0}, {1Â 1Â 1}, {1Â 1Â 0}, and {1Â 1Â 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 1, 4 January 2008, Pages 187-203
Journal: Journal of Crystal Growth - Volume 310, Issue 1, 4 January 2008, Pages 187-203
نویسندگان
F. Silva, X. Bonnin, J. Achard, O. Brinza, A. Michau, A. Gicquel,