کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794584 | 1023702 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effectiveness of non-linear graded buffers for In(Ga,Al)As metamorphic layers grown on GaAs (0Â 0Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the effectiveness of non-linear graded buffers for metamorphic In(Ga,Al)As layers grown on GaAs (0Â 0Â 1). The metamorphic In(Ga,Al)As layers with three types of graded buffers were grown on semi-insulating GaAs (0Â 0Â 1) substrates by means of molecular beam epitaxy. Materials were characterized by using atomic force microscopy, transmission electron microscopy, X-ray diffraction, Hall measurement, and photoluminescence. We found a tendency that the convex type is effective in enhancing optical and electron transport properties of the InGaAs metamorphic layers on GaAs. This can be attributed to alloy-hardening gradient of the graded buffers and different pair-annihilation probability in the InGaAs metamorphic layers. Electron transport properties with regard to the InGaAs/InAlAs metamorphic high electron mobility heterostructures on GaAs are independent on the types of graded buffers; near-surface threading dislocation densities of the graded buffers are on the order of 108Â cmâ2, which are insensitive densities in changing the electron transport properties in the heterostructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 4, 1 February 2009, Pages 1091-1095
Journal: Journal of Crystal Growth - Volume 311, Issue 4, 1 February 2009, Pages 1091-1095
نویسندگان
H. Choi, Y. Jeong, J. Cho, M.H. Jeon,