کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794589 | 1023702 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques Optical and electrical properties of CuScO2 epitaxial films prepared by combining two-step deposition and post-annealing techniques](/preview/png/1794589.png)
چکیده انگلیسی
A CuScO2(0 0 0 1) epitaxial film with a thickness of a few hundred nanometers was successfully grown on an a-plane sapphire substrate by combining the two-step deposition and post-annealing techniques. The film was single-phase with a rhombohedral crystal structure and showed six-fold rotational symmetry in the basal plane, indicating that the film had a twinned domain structure. The orientation relationships of the film with respect to the substrate were CuScO2[3R](0 0 0 1)//sapphire(1 1 2¯ 0) and CuScO2[3R][1 1 2¯ 0]//sapphire[0 0 0 1]. The average optical transmittance of the film was higher than 60% in the visible/near-infrared regions, and the energy gap for direct allowed transition was estimated to be 3.7 eV. The p-type conduction of the film was confirmed by Hall measurement. The electrical conductivity, carrier concentration, Hall mobility, and Seebeck coefficient of the film at room temperature were 1.0Ã10â3 S cmâ1, 4.5Ã1016 cmâ3, 1.4Ã10â1 cm2 Vâ1 sâ1, and +968 μV Kâ1, respectively. The activation energy estimated from the temperature dependence of the carrier concentration was 0.62 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 4, 1 February 2009, Pages 1117-1122
Journal: Journal of Crystal Growth - Volume 311, Issue 4, 1 February 2009, Pages 1117-1122
نویسندگان
Yoshiharu Kakehi, Kazuo Satoh, Tsutom Yotsuya, Keiichiro Masuko, Takeshi Yoshimura, Atsushi Ashida, Norifumi Fujimura,