Properties of InMnP (0Â 0Â 1) grown by MOVPE

We investigated growth and incorporation of Mn into InP (0 0 1) by metal-organic vapour phase epitaxy (MOVPE). Depending on the Mn/In ratio and temperature we found four different incorporation regimes. Flat mirror like layers with high Mn incorporation were either produced around 510∘C or around 600∘C. At higher temperatures or higher Mn-fluxes, the surfaces roughened. We achieved a maximum Mn incorporation around 0.6%, estimated by X-ray diffraction. The corresponding hole concentration was 1.7×1017cm-3. The hole activation energy for the Mn acceptor in variable temperature Hall measurements was 220 meV, comparable to the onset of a broad photoluminescence. Due to this high activation energy the layers showed no spin polarization.