Characterization of (Al)GaAs/AlAs distributed Bragg mirrors grown by MBE and LP MOVPE techniques

Optical reflectance (R) and high-resolution X-ray diffraction (HR XRD) have been used for characterization and verification of the distributed Bragg reflectors (DBR) grown by two competing and complementary techniques: molecular beam epitaxy (MBE) and low-pressure metalorganic vapor phase epitaxy (LP MOVPE). The DBRs under study consisted of the stack of (Al)GaAs and AlAs quarter wavelength layers deposited on (1 0 0) oriented GaAs substrates. We demonstrate experimentally that employment of the above-mentioned methods allows for comprehensive characterization of the Bragg mirror properties and optimization of their fabrication procedure for application in highly demanding optical devices.