InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy

We have demonstrated InxGa1−xN epitaxial growth with InN mole fractions of x=0.07 to 0.17 on an m-plane ZnO substrate by metalorganic vapor phase epitaxy for the first time. The crystalline quality of the epilayers was found to be much higher than that of epilayers grown on a GaN template on an m-plane SiC substrate.