کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794938 | 1023710 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Single-phase γ-In2Se3 thin films have been prepared on Si(1 1 1) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenide. The films have been characterized by X-ray diffraction and scanning electron microscopy. The crystalline quality and surface morphology of single-phase γ-In2Se3 films are much improved by introducing an AlN buffer layer. The optical properties of the films have been studied by temperature dependent photoluminescence (PL) measurements. The single-phase γ-In2Se3 films that we obtained have strong free exciton emissions of 2.14 eV at 10 K. The band gap of single-phase γ-In2Se3 at room temperature is estimated at 1.94 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 283–287
Journal: Journal of Crystal Growth - Volume 306, Issue 2, 15 August 2007, Pages 283–287
نویسندگان
K.J. Chang, S.M. Lahn, Z.J. Xie, J.Y. Chang, W.Y. Uen, T.U. Lu, J.H. Lin, T.Y. Lin,