کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795072 | 1023713 | 2009 | 6 صفحه PDF | دانلود رایگان |
Aluminum oxide (Al2O3) films were deposited by atmospheric pressure chemical vapor deposition (AP-CVD) method from aluminum trichloride (AlCl3), argon, and oxygen gas mixtures at temperatures ranging from 800 to 1000 °C. Alumina films with crystalline phases of γ- or θ-, and α-alumina were obtained starting at 800 °C. Increase in the relative amount of the α-phase as well as improvement in crystallinity is observed as temperature is increased to 1000 °C. The films have low chlorine content, which continued to decrease with increasing temperature. Analysis of the film growth rate on tubular substrates of varying diameters revealed a diffusion-limited growth from 800 to 950 °C and gas-phase reaction-limited growth at 1000 °C. The growth species is a cluster with size 1.2 nm at 800 °C and 0.9 nm at 950 °C. The gas-phase reaction constant at 1000 °C is 1.1/s.
Journal: Journal of Crystal Growth - Volume 311, Issue 2, 1 January 2009, Pages 429–434