Keywords: A3 رسوبات بخار شیمیایی; A1. Characterization; A1. Crystal morphology; A1. Crystal structure; A1. X-ray diffraction; A3. Chemical vapor deposition; B2. Semiconducting silicon compounds
مقالات ISI A3 رسوبات بخار شیمیایی (ترجمه نشده)
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Self-separation of freestanding diamond films using graphite interlayers precipitated from C-dissolved Ni substrates
Keywords: A3 رسوبات بخار شیمیایی; A1. Interfaces; A1. Segregation; A3. Chemical vapor deposition; B1. Diamond;
HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process
Keywords: A3 رسوبات بخار شیمیایی; A1. Computer simulation; A1. Mass transfer; A1. Stresses; A3. Chemical vapor deposition; A3. Hydride Vapor Phase Epitaxy; B1. Aluminum nitride;
Comprehensive nucleation mechanisms of quasi-monolayer graphene grown on Cu by chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; A1. Nucleation; A1. Single crystal growth; A3. Chemical vapor deposition; B1. Nanomaterials
Epitaxial growth of spinel cobalt ferrite films on MgAl2O4 substrates by direct liquid injection chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; A3. Chemical vapor deposition; B1. Cobalt ferrite; B1. Inverse spinel; B2. Magnetic materials; B2. Multiferroic composites
Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates
Keywords: A3 رسوبات بخار شیمیایی; A1. Surface roughening; A3. Chemical vapor deposition; A3. Hot-wall epitaxy; B1. Silicon carbide;
Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD
Keywords: A3 رسوبات بخار شیمیایی; A1. TEM; A3. Chemical vapor deposition; B1. Eutectic temperature; B1. Nanowires; B1. HfC
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
Keywords: A3 رسوبات بخار شیمیایی; A1. Photoluminescence; A1. Segregation; A3. Chemical vapor deposition; B1. Alloys; B2. GeSn; B2. Semiconducting germanium
Transport properties of Sb-doped Si nanowires
Keywords: A3 رسوبات بخار شیمیایی; A1. Doping; A3. Chemical vapor deposition; B1. Nanomaterials; B2. Semiconducting silicon; B3. Field effect transistors;
Morphology control of gallium nitride grown on silicon nanoporous pillar array: From cone-strings to nanowires
Keywords: A3 رسوبات بخار شیمیایی; A1. Nanostructures; A3. Chemical vapor deposition; B1. Gallium nitride; B1. Silicon nanoporous pillar array (Si-NPA)
Doping induced lattice misfit in 4H–SiC homoepitaxy
Keywords: A3 رسوبات بخار شیمیایی; A1. Defects; A1. Stresses; A1. X-ray diffraction; A3. Chemical vapor deposition; B1. Silicon carbide
The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires
Keywords: A3 رسوبات بخار شیمیایی; A1. Nanostructures; A3. Chemical vapor deposition; B2. Semiconducting silicon
Synthesis and electrophosphorescent properties of iridium complexes based on phenylpyridine-based main ligand for organic light-emitting diodes
Keywords: A3 رسوبات بخار شیمیایی; A1. Solution process; A3. Chemical vapor deposition; B3. Organic light-emitting diodes
Phosphorus donor incorporation in (1 0 0) homoepitaxial diamond: Role of the lateral growth
Keywords: A3 رسوبات بخار شیمیایی; A1. Phosphorus doping; A1. n-type; A1. Incorporation model; A2. Single crystal growth; A3. Chemical vapor deposition; B1. Diamond
Vanadium doping using VCl4 source during the chloro-carbon epitaxial growth of 4H-SiC
Keywords: A3 رسوبات بخار شیمیایی; A1. Crystal morphology; A1. Doping; A3. Chemical vapor deposition; A3. Hot wall epitaxy; A3. Chloride vapor phase epitaxy; B2. Semiconducting silicon carbide
Fabrication of SnO2 one-dimensional nanosturctures with graded diameters by chemical vapor deposition method
Keywords: A3 رسوبات بخار شیمیایی; 61.46.Km; 61.82.Fk; 78.40.Fy; 81.15.GhA1. Nanostructures; A3. Chemical vapor deposition; B1. Processes; B1. Nanomaterials; B2. Semiconducting materials
Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors
Keywords: A3 رسوبات بخار شیمیایی; A1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot wall epitaxy; B2. Semiconducting silicon carbide
Tip-growth mode and base-growth mode of Au-catalyzed zinc oxide nanowires using chemical vapor deposition technique
Keywords: A3 رسوبات بخار شیمیایی; A1. Growth model; A1. Nanostructures; A1. Nucleation; A3. Chemical vapor deposition; B1. ZnO; B2. Semiconducting II–VI materials
Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC
Keywords: A3 رسوبات بخار شیمیایی; A1. Growth models; A1. Crystal morphology; A3. Chemical vapor deposition; A3. Hot wall epitaxy; A3. Chloride vapor phase epitaxy; B2. Semiconducting silicon carbide;
Growth behavior of nonpolar GaN on the nearly lattice-matched (1 0 0) γ-LiAlO2 substrate by chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; 81.05.Ea; 81.15.GhA2. Czochralski method; A3. Chemical vapor deposition; B1. GaN
Influence of periodic magnetic field on the growth of CVD diamond films at lower temperature
Keywords: A3 رسوبات بخار شیمیایی; 71.35.Ji; 72.15.Jf; 73.61.Le; 74.25.Nf; A1. Periodic magnetic field; A3. Chemical vapor deposition; B1. Diamond film;
Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride
Keywords: A3 رسوبات بخار شیمیایی; 31.15.Eâ; 34.50.Lf; 81.05.Je; 81.15.Gh; 82.60.âs; A1. DFT calculation; A1. Transamination; A3. Atomic layer epitaxy; A3. Chemical vapor deposition; B1. Tantalum nitride;
Study of the thermal decomposition of “captured” intermediates in the CVD of ZnO from DEZ and H2O by TGA-DTA and quadrupole mass spectroscopy
Keywords: A3 رسوبات بخار شیمیایی; 81.70.Pg; 82.30.Lp; 82.80.Ms; A1. Thermal decomposition; A3. Chemical vapor deposition; B1. Zinc compounds;
Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; 81.07.Bc; 81.15.GhA1. Crystallites; A1. Nanostructures; A3. Chemical vapor deposition; A3. Polycrystalline deposition; B1. Silicon nitrides
Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 82.20.PmA1. Diffusivity; A1. Growth kinetics; A3. Chemical vapor deposition; B1. Aluminum oxide
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 81.05.Hd; 81.65.Cf; 78.30.AmA1. Etching; A3. Chemical vapor deposition; B1. Silicon carbide
Catalyzed chemical vapor deposition of one-dimensional nanostructures and their applications
Keywords: A3 رسوبات بخار شیمیایی; 61.46.Hk; 61.82.Fk; 81.15.Gh; 81.16.−c; 82.65.Jv; 68.70.+w; 85.35.−pA1. Nanostructures; A1. One-dimensional nanomaterials; A1. Low temperature plasma; A1. Catalyzed growth; A2. Vapor–liquid–solid technique; A3. Chemical vapor deposition
Gas phase nucleation of crystalline silicon and their role in low-temperature deposition of microcrystalline films during hot-wire chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; 68.55.Ac; 81.15.GhA1. Characterization; A1. Crystallites; A1. Nucleation; A3. Chemical vapor deposition; B2. Semiconducting silicon
The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures
Keywords: A3 رسوبات بخار شیمیایی; 78.67.BfA1. Nanocrystals; A1. Photoluminescence; A3. Chemical vapor deposition; A3. Thin film multilayers; B1. Silicon; B1. Silicon nitride
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(1 0 0) by ultrahigh vacuum chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; 68.75.+x; 58.55.JK; 78.30.−jA1. Characterization; A1. Reflection high energy electron diffraction; A1. X-ray diffraction; A3. Chemical vapor deposition; B1. Germanium
Chemical-vapor-deposition-initiated growth and characterization of diamond and diamond-like microcrystals
Keywords: A3 رسوبات بخار شیمیایی; 81.05.Uw; 81.15.Gh; 68.37.HkA1. Characterization; A2. Growth from vapor; A3. Chemical vapor deposition; B1. Diamond
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(1Â 1Â 1)
Keywords: A3 رسوبات بخار شیمیایی; 73.40.Kp; 73.61.Ey; 81.05.ât; 81.15.Gh; 81.15.Hi; 85.30.Tv; A3. Chemical vapor deposition; A3. Molecular beam epitaxy; B1. Silicon carbide; B1. Nitrides; B3. High electron mobility transistors;
Rapid growth and photoluminescence properties of doped ZnS one-dimensional nanostructures
Keywords: A3 رسوبات بخار شیمیایی; 61.46.HK; 78.67.Bf; 81.07.VbA1. Low-dimensional structures; A1. Photoluminescence properties; A3. Chemical vapor deposition; B1. ZnS; B2. Semiconducting materials
Fluid dynamic analysis of gas flow in a thermal-CVD system designed for growth of carbon nanotubes
Keywords: A3 رسوبات بخار شیمیایی; 64.70.fh; 61.48.De; 81.16.−cA1. Computer simulation; A1. Fluid dynamic flow; A1. Growth mechanism; A3. Chemical vapor deposition; B1. Carbon nanotubes
On the pyrophoricity, safety, and handling of metalorganic chemicals
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 07.90.+c; 81.05.Ea; A3. Chemical vapor deposition; B1. Metalorganic compounds;
Selective silicon nanoparticle growth on high-density arrays of silicon nitride
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 81.05.Gy; 81.16.Nd; 83.80.Uv; 81.07.âb; A1. Nanoparticles; A3. Chemical vapor deposition; B1. Nitrides; B1. Oxides; B1. Silicon;
Epitaxial growth and characterization of silicon carbide films
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 81.10.Bk; 81.15.KkA1. Etching; A1. X-ray diffraction; A1. X-ray topography; A3. Chemical vapor deposition; A3. Vapor growth; B1. Silicon carbide
Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature
Keywords: A3 رسوبات بخار شیمیایی; 78.55.Cr; 81.05.Ea; 81.15.GhA1. Diffusion; A3. Chemical vapor deposition; B1. GaN; B3. Light-emitting diodes
Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Gh; 81.15.Kk; 81.05.Hd; 81.10.Aj; 68.55.JkA1. Crystal morphology; A1. Growth models; A3. Chemical vapor deposition; A3. Chloride vapor phase epitaxy; A3. Hot-wall epitaxy; B2. Semiconducting silicon carbide
Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates
Keywords: A3 رسوبات بخار شیمیایی; A1. Defect; A1. Etching; A2. Epitaxial; A3. Chemical vapor deposition; B1. Diamond; B1. Oxygen plasma;
Effects of C/Si ratio in fast epitaxial growth of 4H-SiC(0Â 0Â 0Â 1) by vertical hot-wall chemical vapor deposition
Keywords: A3 رسوبات بخار شیمیایی; 81.15.Kk; 61.72.Ww; A1. Doping; A3. Chemical vapor deposition; A3. Vapor phase epitaxy; B2. Semiconducting silicon compounds;
Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires
Keywords: A3 رسوبات بخار شیمیایی; 81.05.Y; 81.15.G; 81.20.K; A1. Bridging; A1. Nanowires; A3. Chemical vapor deposition; B3. Sensors;
Construction and photoluminescence of In2O3 nanotube array by CVD-template method
Keywords: A3 رسوبات بخار شیمیایی; 68. 65.+g; 81. 05.Hd; 81. 15.Gh; A1. Nanostructures; A3. Chemical vapor deposition; B1. Nanotubes; B1. Oxides; B2. Semiconducting materials;
Heteroepitaxial growth on microscale patterned silicon structures
Keywords: A3 رسوبات بخار شیمیایی; A1. Characterization; A1. High-resolution X-ray diffraction; A3. Chemical vapor deposition; A3. Selective epitaxy; B1. Germanium silicon alloys;