Transport properties of Sb-doped Si nanowires

► Developed a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. ► A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. ► Composition of the shell was confirmed by Raman spectroscopy. ► Doping concentration of Sb was found to be dependent on temperature. ► FET devices fabricated to determine the electrical characteristics of the nanowires.