کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829665 | 1524496 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Heteroepitaxial growth on microscale patterned silicon structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This work is aimed at finding the effect of the patterned size on the quality of the heteroepitaxial growth. We have analyzed heteroepitaxial growth of Ge/SixGe1âx layers on variable duty cycle microscale-patterned Si substrates. These mesa patterns were fabricated using optical lithography, reactive ion and wet-chemical etching techniques. For reference, the quality of the growth on the patterned substrates was compared to that on planar substrates under identical conditions. The quality of the Ge epilayers was evaluated by using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution X-ray diffraction (HRXRD), and etch pit density (EPD) measurements. Using TEM and X-ray measurements we determined that the defect density is reduced as the size of the posts decreased from 20 to 4 μm, while keeping the center to center distance between the posts constant at 25 μm. The dislocation density obtained for Ge/SixGe1âx on the planar, the smallest patterned and the largest patterned structures were 6Ã108, 4Ã107 and 2Ã108 cmâ2, respectively. The typical crosshatch pattern present in the planar samples is not present in the patterned samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 66-74
Journal: Journal of Crystal Growth - Volume 280, Issues 1â2, 15 June 2005, Pages 66-74
نویسندگان
G. Vanamu, A.K. Datye, Saleem H. Zaidi,