کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795103 | 1023715 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ammonothermal growth of bulk GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ammonothermal growth of bulk GaN Ammonothermal growth of bulk GaN](/preview/png/1795103.png)
چکیده انگلیسی
Bulk GaN crystals have been realized by the basic ammonothermal method. Three-dimensional polyhedron-shaped crystals in size of approximately 5 mm and their sliced wafers demonstrated the feasibility of the basic ammonothermal method to produce GaN wafers. Clear crystallographic facets of N face and m planes were observed although Ga face was decorated with angled facets of {1 0 1¯ 1} planes. The growth rate and growth nature showed distinct anisotropy. The transmission electron microscopy revealed high quality of microstructure, whereas selective etching and X-ray diffraction revealed multiple grains, which were presumably caused by insufficient structural quality of seed crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 17, 15 August 2008, Pages 3907–3910
Journal: Journal of Crystal Growth - Volume 310, Issue 17, 15 August 2008, Pages 3907–3910
نویسندگان
Tadao Hashimoto, Feng Wu, James S. Speck, Shuji Nakamura,