Seeded growth of GaN single crystals from solution at near atmospheric pressure

A multi-component solvent has been developed to dissolve solid gallium nitride (GaN) source material and grow single GaN crystals from the solution on GaN seeds. A thermal gradient is used to maintain GaN dissolution at the hot end of the crucible and to grow GaN crystals on a seed at the colder end. Crystals were grown at nitrogen pressure of 0.23-0.25 MPa and temperature of 800 °C. Optical microscopy, X-ray diffraction, micro Raman scattering and photoluminescence spectroscopy confirmed the high structural and optical quality of the GaN crystals.