کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795151 1023716 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of La0.5Sr0.5CoO3 thin film on MgO-buffered Si substrate by pulsed laser deposition method: Evolution of crystalline orientation, morphology and growth mode with substrate temperature
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of La0.5Sr0.5CoO3 thin film on MgO-buffered Si substrate by pulsed laser deposition method: Evolution of crystalline orientation, morphology and growth mode with substrate temperature
چکیده انگلیسی

Growth of La0.5Sr0.5CoO3 (LSCO) thin film on MgO epilayer buffered Si substrate was carried out by pulsed laser deposition (PLD) technique. By employing various characterization methods, such as reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM), it can be found that substrate temperatures have huge impacts on the crystalline orientations, growth modes and surface morphologies of the LSCO thin films. Epitaxial LSCO thin film can be prepared at optimum substrate temperature. The obtained epitaxial film exhibits an atomic-scale smooth surface (RMS=0.6 nm) and an excellent conductivity (electrical resistivity as low as 600 μΩ cm), indicating that the epitaxial LSCO film could be used as a promising candidate of electrode material for the ferroelectric thin films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 307, Issue 2, 15 September 2007, Pages 367–371
نویسندگان
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