کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795337 | 1524483 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Al and N co-doped ZnTe Layers Grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Al and N co-doped ZnTe Layers Grown by MBE Al and N co-doped ZnTe Layers Grown by MBE](/preview/png/1795337.png)
چکیده انگلیسی
The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 285–288
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 285–288
نویسندگان
A. Ichiba, M. Kobayashi,