Development of a software for the numerical simulation of VCz growth under the influence of a traveling magnetic field

A software for the numerical simulation of crystal growth from the melt under the influence of a traveling magnetic field was developed by coupling a global stationary simulation of the temperature distribution and the electro-magnetic fields to a local transient simulation of the melt. Numerical results of the simulation of the vapor pressure controlled Czochralski (VCz) growth of GaAs are presented.