کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795958 | 1524485 | 2007 | 5 صفحه PDF | دانلود رایگان |

This paper discusses the results of a combined modeling and experimental analysis of AlGaN deposition in the horizontal two-flow AIX 200/4 RF-S reactor. The purpose of this study is to examine conventional and inverted supply of the precursors into the reactor with respect to the growth reproducibility and efficiency of the aluminum (Al) incorporation. It has been found that the use of the inverted inlet improves the reproducibility of the growth process and provides a good control of AlGaN deposition. At the same time, the Al content appears to be somewhat lower for the inverted inlet configuration. A good agreement between the experimental data and model predictions allows us to use the modeling results for interpretation of the experimental findings.
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 413–417