کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795958 1524485 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of the reactor inlet configuration on the AlGaN growth efficiency
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influence of the reactor inlet configuration on the AlGaN growth efficiency
چکیده انگلیسی

This paper discusses the results of a combined modeling and experimental analysis of AlGaN deposition in the horizontal two-flow AIX 200/4 RF-S reactor. The purpose of this study is to examine conventional and inverted supply of the precursors into the reactor with respect to the growth reproducibility and efficiency of the aluminum (Al) incorporation. It has been found that the use of the inverted inlet improves the reproducibility of the growth process and provides a good control of AlGaN deposition. At the same time, the Al content appears to be somewhat lower for the inverted inlet configuration. A good agreement between the experimental data and model predictions allows us to use the modeling results for interpretation of the experimental findings.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 413–417
نویسندگان
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