Growth, surface microtopographic and thermal studies of CuInS2

Single crystals of CuInS2 have been grown by chemical vapour transport (CVT) technique. The stoichiometric composition and the lattice parameter determination of the grown crystals were done by energy dispersive analysis of X-rays (EDAX) and X-ray diffraction (XRD) techniques, respectively. The detailed surface microtopographic study of the as-grown crystals showed that they grow by a lateral layer mechanism. Using the phase diagram of differential thermal analysis (DTA) and thermogravimetric analysis (TGA) in open air, the stability of CuInS2 has been shown at high temperature.