کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796506 1023747 2007 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Concentration and structure inhomogeneities in GaSb(Si) single crystals grown at different heat and mass transfer conditions
چکیده انگلیسی
Results of ground-based experiments on crystallization of gallium antimonide on the POLIZON facility carried out within the framework of space experiment preparation aboard FOTON satellite are submitted. Technical and technological opportunities of suppression of disturbing factors for improvement of quality of grown crystals in space are substantiated. Features of formation of concentration and structure inhomogeneities in GaSb:Si crystals grown under non-stationary and stationary convection conditions are investigated. Experimental data about structure and dopant distribution inhomogeneities are discussed taking into account results of numerical researches of GaSb:Si crystallization. Also earlier received results of modeling of GaSb:Te crystallization under close temperature conditions are used. Correlation between computational and experimental data is shown. The data on intensity of flows close to crystallization front are received at which non-stationary or stationary conditions of crystallization are realized. The forecast for space conditions is made. The influence of a rotating magnetic field on convection in melt for application in space experiment projected is investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 304, Issue 1, 1 June 2007, Pages 11-21
نویسندگان
, , , , , , , ,