کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796562 | 1023749 | 2007 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of growth conditions on the GaN thin film by sputtering deposition Effect of growth conditions on the GaN thin film by sputtering deposition](/preview/png/1796562.png)
The phase transition between thermodynamically stable hexagonal wurtzite (h-WZ) gallium nitride (GaN) and metastable cubic zinc-blende (c-ZB) GaN during growth by radio-frequency planar magnetron sputtering is studied. GaN films grown on substrates with lower mismatches tend to have a h-WZ structure, but when grown on substrates with higher mismatches, a c-ZB structure is preferred. GaN films grown under high nitrogen pressure also tend to have a h-WZ structure, whereas a c-ZB structure is preferred when grown under low nitrogen pressure. In addition, low target-power growth not only helps to improve hexagonal GaN (h-GaN) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic GaN (c-GaN) quality at low nitrogen pressure on high-mismatch substrates.
Journal: Journal of Crystal Growth - Volume 299, Issue 2, 15 February 2007, Pages 268–271