کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1796782 1524484 2007 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases
چکیده انگلیسی

A polycrystalline silicon carbide film is formed on a silicon surface by chemical vapor deposition using monomethylsilane gas along with hydrogen chloride gas in ambient hydrogen at atmospheric pressure. The film deposition is performed near 1000 K, at which temperature the monomethylsilane maintains a chemical bond between the silicon and carbon present in the molecular structure. The excess amount of silicon on the film surface is reduced using the hydrogen chloride gas. Although the film deposition stops within 1 min after beginning the supply of the monomethylsilane gas and hydrogen chloride gas, annealing at 1273 K in ambient hydrogen after the film deposition allows further deposition so that a thick silicon carbide film can be obtained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 300, Issue 2, 15 March 2007, Pages 374–381
نویسندگان
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