کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796921 | 1023757 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis, optical properties and growth mechanism of leaf-like GaN crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Outwardly oriented leaf-like gallium nitride crystal assemblies were synthesized on alumina substrate by a facile thermal chemical vapor deposition method. The as-grown products were spherical conglomerate with “leaves” radiating from central core distributed sparsely on substrate. Each “leaf” with flat and smooth surface was single crystalline GaN with hexagonal structure, its normal dimensions were 4 μm in thickness, 35 μm in width and 300 μm in length. The micro-Raman measurement had shown E2(high) mode located at 567 cmâ1 with a FWHM of 4 cmâ1 as well as the room temperature photoluminescence result of a strong near-band-edge emission at 369 nm without the yellow band evidenced the good crystalline quality of as-prepared “leaf”-like GaN crystal. The formation mechanism of leaf-like crystal assemblies was systematically investigated and discussed on the basis of the experiment results. The resultant leaf-like crystal assembly may be a promising building block for three-dimension device applications in future.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 291, Issue 2, 1 June 2006, Pages 491-496
Journal: Journal of Crystal Growth - Volume 291, Issue 2, 1 June 2006, Pages 491-496
نویسندگان
Hailin Qiu, Chuanbao Cao, Jie Li, Fengqiu Ji, Hesun Zhu,